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HRB0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0047-0200Z Rev.2.00 Sep.01.2003 Features * Low forward voltage drop and suitable for high efficiency rectifying. * CMPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRB0502A Laser Mark E3 Package Code CMPAK Pin Arrangement 3 2 (Top View) 1 1. NC 2. Anode 3. Cathode Rev.2.00, Sep.01.2003, page 1 of 5 HRB0502A Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Forward current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6 2. 10 ms sine wave 1 pulse Symbol VRRM IF * Tj Tstg 1 2 Value 20 500 5 125 -55 to +125 Unit V mA A C C IFSM * Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current Capacitance Thermal resistance Note: Polyimide board 20hx15wx0.8t 1.5 0.8 Symbol VF IR C Rth(j-a) Min -- -- -- -- Typ -- -- 120 450 Max 0.4 200 -- -- Unit V A pF C/W Test Condition IF = 500 mA VR = 20 V VR = 0 V, f = 1 MHz Polyimide board * 1 3.0 2.0 Unit: mm 1.5 Rev.2.00, Sep.01.2003, page 2 of 5 HRB0502A Main Characteristic 10 Pulse test 1.0 Reverse current IR (A) Forward current IF (A) Ta = 75C 10-1 Pulse test 10-2 10-1 Ta = 25C 10-3 Ta = 75C 10 -2 10-4 Ta = 25C 10-3 10-5 10-4 0 0.2 0.4 0.6 0.8 1.0 10-6 0 5 10 15 20 25 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 100 f = 1MHz Pulse test Capacitance C (pF) 10 1.0 1.0 10 Reverse voltage VR (V) 40 Fig.3 Capacitance vs. Reverse voltage Rev.2.00, Sep.01.2003, page 3 of 5 HRB0502A 0.4 Forward power dissipation Pd (W) 0 2.5 0 Reverse power dissipation Pd (W) Io tp T D= tp T D=1/6 D=1/3 Sin wave D=1/2 VR tp T D= tp T 2.0 0.3 D=5/6 D=2/3 D=1/2 Tj = 25C Tj =125C 1.5 0.2 DC 1.0 Sin wave 0.5 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0 0 5 10 15 20 25 Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current Reverse voltage VR (V) Fig.5 Reverse power dissipation vs. Reverse voltage 0.6 VR = 3V Tj = 125C Average rectified current IO (A) Rth(j-a) = 450C/W 0.5 0.4 0.3 0.2 0.1 0 -25 D=1/6 D=1/2 Sin wave D=1/3 DC 0 Io tp T tp D=-- T 0 25 50 75 100 125 Ambient temperature Ta (C) Fig.6 Average rectified current vs. Ambient temperature Rev.2.00, Sep.01.2003, page 4 of 5 HRB0502A Package Dimensions As of January, 2003 Unit: mm 2.0 0.2 0.1 0.3 + 0.05 - (0.425) 0.16 - 0.06 + 0.1 (0.425) 1.25 0.1 2.1 0.3 0 - 0.1 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - 1.3 0.2 (0.2) 0.9 0.1 (0.65) (0.65) Package Code JEDEC JEITA Mass (reference value) CMPAK -- Conforms 0.006 g Rev.2.00, Sep.01.2003, page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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